FDC021N30

AMI Semiconductor / ON Semiconductor

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Samfurin Samfurin

Sashe na Ƙari:	FDC021N30
Manufacturer / Brand:	AMI Semiconductor / ON Semiconductor
Bayanin samfur	PT8 N 30V/20V, MOSFET
Datasheets:	FDC021N30.pdf
Bayanin Bincike	425176 pcs stock
Ship Daga	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 425176 pcs

Lambar (A Cikin Dollar Amirka)

1 pcs: $0.174

10 pcs: $0.136

100 pcs: $0.093

500 pcs: $0.064

1000 pcs: $0.048

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Sashe na Ƙari
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Bayani na FDC021N30

Sashe na Ƙari	FDC021N30	Manufacturer	AMI Semiconductor / ON Semiconductor
Bayani	PT8 N 30V/20V, MOSFET	Matsayin Farko / Matsayin RoHS
Yawan Akwai	425176 pcs	Takardar bayanai	FDC021N30.pdf
Vgs (th) (Max) @ Id	3V @ 250µA	Vgs (Max)	±20V
Fasaha	MOSFET (Metal Oxide)	Asusun na'ura mai ba da kyauta	SuperSOT™-6
Sauti	PowerTrench®	Rds On (Max) @ Id, Vgs	26 mOhm @ 6.1A, 10V
Dissipation Power (Max)	700mW (Ta)	Packaging	Original-Reel®
Package / Case	SOT-23-6	Sauran Sunaye	FDC021N30DKR
Temperayi mai aiki	-55°C ~ 150°C (TJ)	Nau'in Sanya	Surface Mount
Sensitivity Level (MSL)	1 (Unlimited)	Ma'aikaci Tsawon Gwaninta	42 Weeks
Ƙarfin shigarwa (Ciss) (Max) @ Vds	710pF @ 15V	Ƙofar Ƙofar (Qg) (Max) @ Vgs	10.8nC @ 10V
FET Type	N-Channel	FET Feature	-
Fitar da Rigar (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Rashin wutar lantarki (Vdss)	30V
Bayanin Dalla-dalla	N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6	A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C	6.1A (Ta)

Shigowa
Bayan-Sales
Datasheets

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