SI4110DY-T1-GE3

Electro-Films (EFI) / Vishay

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Samfurin Samfurin

Sashe na Ƙari:	SI4110DY-T1-GE3
Manufacturer / Brand:	Electro-Films (EFI) / Vishay
Bayanin samfur	MOSFET N-CH 80V 17.3A 8-SOIC
Datasheets:	SI4110DY-T1-GE3.pdf
RoHs Status	Kira kyauta / RoHS mai yarda
Bayanin Bincike	4093 pcs stock
Ship Daga	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4093 pcs

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Bayani na SI4110DY-T1-GE3

Sashe na Ƙari	SI4110DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Bayani	MOSFET N-CH 80V 17.3A 8-SOIC	Matsayin Farko / Matsayin RoHS	Kira kyauta / RoHS mai yarda
Yawan Akwai	4093 pcs	Takardar bayanai	SI4110DY-T1-GE3.pdf
Vgs (th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Fasaha	MOSFET (Metal Oxide)	Asusun na'ura mai ba da kyauta	8-SO
Sauti	TrenchFET®	Rds On (Max) @ Id, Vgs	13 mOhm @ 11.7A, 10V
Dissipation Power (Max)	3.6W (Ta), 7.8W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm Width)	Sauran Sunaye	SI4110DY-T1-GE3TR SI4110DYT1GE3
Temperayi mai aiki	-55°C ~ 150°C (TJ)	Nau'in Sanya	Surface Mount
Sensitivity Level (MSL)	1 (Unlimited)	Matsayin Farko / Matsayin RoHS	Lead free / RoHS Compliant
Ƙarfin shigarwa (Ciss) (Max) @ Vds	2205pF @ 40V	Ƙofar Ƙofar (Qg) (Max) @ Vgs	53nC @ 10V
FET Type	N-Channel	FET Feature	-
Fitar da Rigar (Max Rds On, Min Rds On)	10V	Drain to Source Rashin wutar lantarki (Vdss)	80V
Bayanin Dalla-dalla	N-Channel 80V 17.3A (Tc) 3.6W (Ta), 7.8W (Tc) Surface Mount 8-SO	A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C	17.3A (Tc)

Shigowa
Bayan-Sales
Datasheets

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(KAWAI GA Hadadden Da'irori, Kariyar kewaya, RF / IF da RFID, Optoelectronics, Masu auna sigari, masu sauyawa, masu sauya kaya, masu ba da labari, masu sauyawa, sake dubawa)

FEDEX	www.FedEx.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.
DHL	www.DHL.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.
UPS	www.UPS.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.
TNT	www.TNT.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.

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