SI4776DY-T1-GE3

Electro-Films (EFI) / Vishay

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Samfurin Samfurin

Sashe na Ƙari:	SI4776DY-T1-GE3
Manufacturer / Brand:	Electro-Films (EFI) / Vishay
Bayanin samfur	MOSFET N-CHANNEL 30V 11.9A 8SO
Datasheets:	SI4776DY-T1-GE3.pdf
RoHs Status	Kira kyauta / RoHS mai yarda
Bayanin Bincike	233805 pcs stock
Ship Daga	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 233805 pcs

Lambar (A Cikin Dollar Amirka)

2500 pcs: $0.094

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Farashin Target:(USD)
Qty:

Jimlar:$0.094

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Sashe na Ƙari
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Saƙo

Bayani na SI4776DY-T1-GE3

Sashe na Ƙari	SI4776DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Bayani	MOSFET N-CHANNEL 30V 11.9A 8SO	Matsayin Farko / Matsayin RoHS	Kira kyauta / RoHS mai yarda
Yawan Akwai	233805 pcs	Takardar bayanai	SI4776DY-T1-GE3.pdf
Vgs (th) (Max) @ Id	2.3V @ 1mA	Vgs (Max)	±20V
Fasaha	MOSFET (Metal Oxide)	Asusun na'ura mai ba da kyauta	8-SO
Sauti	SkyFET®, TrenchFET®	Rds On (Max) @ Id, Vgs	16 mOhm @ 10A, 10V
Dissipation Power (Max)	4.1W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm Width)	Sauran Sunaye	SI4776DY-T1-GE3TR
Temperayi mai aiki	-55°C ~ 150°C (TA)	Nau'in Sanya	Surface Mount
Sensitivity Level (MSL)	1 (Unlimited)	Matsayin Farko / Matsayin RoHS	Lead free / RoHS Compliant
Ƙarfin shigarwa (Ciss) (Max) @ Vds	521pF @ 15V	Ƙofar Ƙofar (Qg) (Max) @ Vgs	17.5nC @ 10V
FET Type	N-Channel	FET Feature	-
Fitar da Rigar (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Rashin wutar lantarki (Vdss)	30V
Bayanin Dalla-dalla	N-Channel 30V 11.9A (Tc) 4.1W (Tc) Surface Mount 8-SO	A halin yanzu - Ci gaba mai dadi (Id) @ 25 ° C	11.9A (Tc)

Shigowa
Bayan-Sales
Datasheets

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FEDEX	www.FedEx.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.
DHL	www.DHL.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.
UPS	www.UPS.com	Daga $ 35,00 kudin jigilar kayayyaki ya dogara da yankin da ƙasa.
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